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High-Performance Solution-Processed Organo-Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross-Bar Array Structure
DC Field | Value | Language |
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dc.contributor.author | Kang, Keehoon | - |
dc.contributor.author | Ahn, Heebeom | - |
dc.contributor.author | Song, Younggul | - |
dc.contributor.author | Lee, Woocheol | - |
dc.contributor.author | Kim, Junwoo | - |
dc.contributor.author | Kim, Youngrok | - |
dc.contributor.author | Yoo, Daekyoung | - |
dc.contributor.author | Lee, Takhee | - |
dc.date.accessioned | 2024-05-16T01:27:25Z | - |
dc.date.available | 2024-05-16T01:27:25Z | - |
dc.date.created | 2020-04-20 | - |
dc.date.created | 2020-04-20 | - |
dc.date.issued | 2019-05 | - |
dc.identifier.citation | Advanced Materials, Vol.31 No.21, p. 1804841 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | https://hdl.handle.net/10371/202541 | - |
dc.description.abstract | Resistive random access memories can potentially open a niche area in memory technology applications by combining the advantages of the long endurance of dynamic random-access memory and the long retention time of flash memories. Recently, resistive memory devices based on organo-metal halide perovskite materials have demonstrated outstanding memory properties, such as a low-voltage operation and a high ON/OFF ratio; such properties are essential requirements for low power consumption in developing practical memory devices. In this study, a nonhalide lead source is employed to deposit perovskite films via a simple single-step spin-coating method for fabricating unipolar resistive memory devices in a cross-bar array architecture. These unipolar perovskite memory devices achieve a high ON/OFF ratio up to 10(8) with a relatively low operation voltage, a large endurance, and long retention times. The high-yield device fabrication based on the solution-process demonstrated here will be a step toward achieving low-cost and high-density practical perovskite memory devices. | - |
dc.language | 영어 | - |
dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.title | High-Performance Solution-Processed Organo-Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross-Bar Array Structure | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adma.201804841 | - |
dc.citation.journaltitle | Advanced Materials | - |
dc.identifier.wosid | 000474801000002 | - |
dc.identifier.scopusid | 2-s2.0-85063691887 | - |
dc.citation.number | 21 | - |
dc.citation.startpage | 1804841 | - |
dc.citation.volume | 31 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Kang, Keehoon | - |
dc.contributor.affiliatedAuthor | Lee, Takhee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | METHYLAMMONIUM LEAD IODIDE | - |
dc.subject.keywordPlus | SWITCHING MEMORIES | - |
dc.subject.keywordPlus | SOLAR-CELLS | - |
dc.subject.keywordPlus | DIODE | - |
dc.subject.keywordPlus | MECHANISMS | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordAuthor | cross-bar array architecture | - |
dc.subject.keywordAuthor | nonvolatile memory | - |
dc.subject.keywordAuthor | organo-metal halide perovskite | - |
dc.subject.keywordAuthor | perovskite memory devices | - |
dc.subject.keywordAuthor | resistive switching | - |
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