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High-Performance Solution-Processed Organo-Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross-Bar Array Structure

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dc.contributor.authorKang, Keehoon-
dc.contributor.authorAhn, Heebeom-
dc.contributor.authorSong, Younggul-
dc.contributor.authorLee, Woocheol-
dc.contributor.authorKim, Junwoo-
dc.contributor.authorKim, Youngrok-
dc.contributor.authorYoo, Daekyoung-
dc.contributor.authorLee, Takhee-
dc.date.accessioned2024-05-16T01:27:25Z-
dc.date.available2024-05-16T01:27:25Z-
dc.date.created2020-04-20-
dc.date.created2020-04-20-
dc.date.issued2019-05-
dc.identifier.citationAdvanced Materials, Vol.31 No.21, p. 1804841-
dc.identifier.issn0935-9648-
dc.identifier.urihttps://hdl.handle.net/10371/202541-
dc.description.abstractResistive random access memories can potentially open a niche area in memory technology applications by combining the advantages of the long endurance of dynamic random-access memory and the long retention time of flash memories. Recently, resistive memory devices based on organo-metal halide perovskite materials have demonstrated outstanding memory properties, such as a low-voltage operation and a high ON/OFF ratio; such properties are essential requirements for low power consumption in developing practical memory devices. In this study, a nonhalide lead source is employed to deposit perovskite films via a simple single-step spin-coating method for fabricating unipolar resistive memory devices in a cross-bar array architecture. These unipolar perovskite memory devices achieve a high ON/OFF ratio up to 10(8) with a relatively low operation voltage, a large endurance, and long retention times. The high-yield device fabrication based on the solution-process demonstrated here will be a step toward achieving low-cost and high-density practical perovskite memory devices.-
dc.language영어-
dc.publisherWILEY-VCH Verlag GmbH & Co. KGaA, Weinheim-
dc.titleHigh-Performance Solution-Processed Organo-Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross-Bar Array Structure-
dc.typeArticle-
dc.identifier.doi10.1002/adma.201804841-
dc.citation.journaltitleAdvanced Materials-
dc.identifier.wosid000474801000002-
dc.identifier.scopusid2-s2.0-85063691887-
dc.citation.number21-
dc.citation.startpage1804841-
dc.citation.volume31-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorKang, Keehoon-
dc.contributor.affiliatedAuthorLee, Takhee-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusMETHYLAMMONIUM LEAD IODIDE-
dc.subject.keywordPlusSWITCHING MEMORIES-
dc.subject.keywordPlusSOLAR-CELLS-
dc.subject.keywordPlusDIODE-
dc.subject.keywordPlusMECHANISMS-
dc.subject.keywordPlusFILMS-
dc.subject.keywordAuthorcross-bar array architecture-
dc.subject.keywordAuthornonvolatile memory-
dc.subject.keywordAuthororgano-metal halide perovskite-
dc.subject.keywordAuthorperovskite memory devices-
dc.subject.keywordAuthorresistive switching-
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area Molecular doping in emerging semiconductors, Next-generation electronic devices, Transport phenomena in organic semiconductors

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