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Unlocking performance potential of two-dimensional SnS<sub>2</sub> transistors with solution-processed high-k Y:HfO<sub>2</sub> film and semimetal bismuth contact
DC Field | Value | Language |
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dc.contributor.author | Song, Chong-Myeong | - |
dc.contributor.author | Kim, Dongsu | - |
dc.contributor.author | Lim, Hyeongtae | - |
dc.contributor.author | Kang, Hongki | - |
dc.contributor.author | Jang, Jae Eun | - |
dc.contributor.author | Kwon, Hyuk- Jun | - |
dc.date.accessioned | 2024-05-16T04:42:33Z | - |
dc.date.available | 2024-05-16T04:42:33Z | - |
dc.date.created | 2024-04-30 | - |
dc.date.created | 2024-04-30 | - |
dc.date.issued | 2023-04 | - |
dc.identifier.citation | Applied Surface Science, Vol.617, p. 156557 | - |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.uri | https://hdl.handle.net/10371/203093 | - |
dc.description.abstract | Two-dimensional (2D) tin disulfide (SnS2) is emerging as a viable channel material for high-performance fieldeffect transistors (FET) with high intrinsic mobility. To implement a high-performance two-dimensional SnS2 FET, high field-effect mobility (mu FE), steep subthreshold swing (SS), high on-current value (Ion), and high on/off ratio (I-on/I-off) must be realized. To improve these parameters, we first fabricated a high-k (similar to 30.5) yttrium-doped hafnium dioxide (Y:HfO2) film through a solution process to suppress Coulomb electron scattering, and to enhance the semiconductor-dielectric interface with an efficient metal-oxygen framework and a very smooth (root mean square = 0.29 nm) surface. Second, we induced Fermi level depinning by introducing a semimetal bismuth (Bi) contact with a low density of states (DOS) at the Fermi level to suppress the metal-induced gap state (MIGS). Through these two strategies, the SnS2 FET obtained high mu FE (60.5 cm(2)V(-1)s(-1)), the SS theoretical limit of 60 mV/dec, negligible Schottky barrier height, high normalized on-current (IonL/W) of 90.6 mu A, and high I-on/ I-off of 3 x 10(7), demonstrating that SnS2 can be re-evaluated as a potentially effective 2D channel material. | - |
dc.language | 영어 | - |
dc.publisher | Elsevier BV | - |
dc.title | Unlocking performance potential of two-dimensional SnS2 transistors with solution-processed high-k Y:HfO2 film and semimetal bismuth contact | - |
dc.type | Article | - |
dc.identifier.doi | 10.1016/j.apsusc.2023.156577 | - |
dc.citation.journaltitle | Applied Surface Science | - |
dc.identifier.wosid | 000934271100001 | - |
dc.identifier.scopusid | 2-s2.0-85147547045 | - |
dc.citation.startpage | 156557 | - |
dc.citation.volume | 617 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Kang, Hongki | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | INVERSION LAYER MOBILITY | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | MONOLAYER SNS2 | - |
dc.subject.keywordPlus | SI MOSFETS | - |
dc.subject.keywordPlus | MOS2 | - |
dc.subject.keywordPlus | THIN | - |
dc.subject.keywordPlus | UNIVERSALITY | - |
dc.subject.keywordPlus | RESISTANCE | - |
dc.subject.keywordAuthor | Tin disulfide (SnS2 ) | - |
dc.subject.keywordAuthor | Field-effect transistor | - |
dc.subject.keywordAuthor | Bismuth (Bi) | - |
dc.subject.keywordAuthor | Fermi level pinning | - |
dc.subject.keywordAuthor | Schottky barrier | - |
dc.subject.keywordAuthor | Yttrium-doped hafnium dioxide (Y:HfO2) | - |
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