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High and Uniform Phosphorus Doping in Germanium Through a Modified Plasma Assisted Delta Doping Process With H<sub>2</sub> Plasma Treatment

Cited 2 time in Web of Science Cited 2 time in Scopus
Authors

Jeong, Heejae; Kim, Y. S.; Baik, Seunghun; Kang, Hongki; Jang, Jae Eun; Kwon, Hyuk-Jun

Issue Date
2022-08
Publisher
Institute of Electrical and Electronics Engineers
Citation
IEEE Electron Device Letters, Vol.43 No.8, pp.1315-1318
Abstract
To achieve high and uniform phosphorus (P) dopant concentration (more than 1 x 10(20) cm(-3)) near the germanium (Ge) surface, H-2 plasma treatment and modified plasma-assisted delta doping (MPADD) process are proposed and investigated. Sufficient vacancies are formed on the Ge surface using H-2 plasma treatment. Consequently, P and vacancies are uniformly included inside during Ge growth through the MPADD process. After the annealing, phosphorus-vacancy-oxygen (PVO) clusters with the lowest binding energy are formed. Therefore, the migration activation energy increases, and the dopant diffusion into the substrate is reduced. As a result, the surface P dopant concentration (4 x 10(21) cm(-3)) improves, and a uniform P concentration of approximately 5 nm is from the Ge surface. These results show that the MPADD process enables a uniform and high surface doping concentration of recently promising Ge materials and compensates for the disadvantages of conventional delta doping, such as long process time and the need for an ultra-high vacuum system.
ISSN
0741-3106
URI
https://hdl.handle.net/10371/203100
DOI
https://doi.org/10.1109/LED.2022.3182730
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