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Enhancement Mode Flexible SnO<sub>2</sub> Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jang, Bongho | - |
dc.contributor.author | Kang, Hongki | - |
dc.contributor.author | Lee, Won-Yong | - |
dc.contributor.author | Bae, Jin-Hyuk | - |
dc.contributor.author | Kang, In-Man | - |
dc.contributor.author | Kim, Kwangeun | - |
dc.contributor.author | Kwon, Hyuk-Jun | - |
dc.contributor.author | Jang, Jaewon | - |
dc.date.accessioned | 2024-05-16T04:43:35Z | - |
dc.date.available | 2024-05-16T04:43:35Z | - |
dc.date.created | 2024-04-30 | - |
dc.date.created | 2024-04-30 | - |
dc.date.issued | 2020-07 | - |
dc.identifier.citation | IEEE Access, Vol.8, pp.123013-123018 | - |
dc.identifier.issn | 2169-3536 | - |
dc.identifier.uri | https://hdl.handle.net/10371/203110 | - |
dc.description.abstract | The effect of ultraviolet/Ozone (UV/O-3)-assisted annealing process on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films is investigated in this study. Via the UV/O-3-assisted annealing processes, mixed-phase SnO2 films composed of amorphous SnO2 and polycrystalline SnO were obtained. Furthermore, the XPS spectra indicate an increase in the SnO2/SnO ratio and a substantial decrease in the number of -OH groups (serving as trap sites). This results in an increase in the conductivity and field-effect mobility of the films. The field-effect mobility of the UV/Ozone-assisted 300 degrees C-annealed SnO2 thin film transistor (TFT) increases considerably (by similar to 500x), yielding a device with a field-effect mobility of 3.09 cm(2)/Vs. In addition, fiexible SnO2 TFTs with Al2O3 insulator and Au gate on Polyimide substrate fabricated via gate electrode engineering shows a decreased conduction bandgap offset, compared to the SnO2 TFTs on SiO2, and enhancement mode operation properties (normally off at zero gate voltage) with a field-effect mobility of 1.87 cm(2)/Vs. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers Inc. | - |
dc.title | Enhancement Mode Flexible SnO2 Thin Film Transistors Via a UV/Ozone-Assisted Sol-Gel Approach | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/ACCESS.2020.3007372 | - |
dc.citation.journaltitle | IEEE Access | - |
dc.identifier.wosid | 000553753700001 | - |
dc.identifier.scopusid | 2-s2.0-85088662136 | - |
dc.citation.endpage | 123018 | - |
dc.citation.startpage | 123013 | - |
dc.citation.volume | 8 | - |
dc.description.isOpenAccess | Y | - |
dc.contributor.affiliatedAuthor | Kang, Hongki | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordAuthor | Sol-gel | - |
dc.subject.keywordAuthor | SnO2 | - |
dc.subject.keywordAuthor | UV/Ozone | - |
dc.subject.keywordAuthor | thin film transistors | - |
dc.subject.keywordAuthor | enhancement mode | - |
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