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Sol-Gel Processed Yttrium-Doped SnO2 Thin Film Transistors

Cited 25 time in Web of Science Cited 29 time in Scopus
Authors

Lee, Changmin; Lee, Won-Yong; Lee, Hyunjae; Ha, Seunghyun; Bae, Jin-Hyuk; Kang, In-Man; Kang, Hongki; Kim, Kwangeun; Jang, Jaewon

Issue Date
2020-02
Publisher
MDPI AG
Citation
Electronics (Basel), Vol.9 No.2, p. 254
Abstract
Y-doped SnO2 thin film transistors were successfully fabricated by means of sol-gel process. The effect of Y concentration on the structural, chemical, and electrical properties of sol-gel-processed SnO2 films was investigated via GIXRD, SPM, and XPS; the corresponding electrical transport properties of the film were also evaluated. The dopant, Y, can successfully control the free carrier concentration by suppressing the formation of oxygen vacancy inside SnO2 semiconductors due to its lower electronegativity and SEP. With an increase of Ywt%, it was observed that the crystallinity and oxygen vacancy concentration decreased, and the operation mode of SnO2 thin film transistor changed from accumulation (normally on) to enhancement mode (normally off) with a positive V-th shift.
URI
https://hdl.handle.net/10371/203111
DOI
https://doi.org/10.3390/electronics9020254
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