Publications
Detailed Information
Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, Hongki | - |
dc.contributor.author | Kim, Jee-Yeon | - |
dc.contributor.author | Choi, Yang-Kyu | - |
dc.contributor.author | Nam, Yoonkey | - |
dc.date.accessioned | 2024-05-16T04:44:00Z | - |
dc.date.available | 2024-05-16T04:44:00Z | - |
dc.date.created | 2024-04-30 | - |
dc.date.created | 2024-04-30 | - |
dc.date.issued | 2017-04 | - |
dc.identifier.citation | Sensors, Vol.17 No.4, p. 705 | - |
dc.identifier.issn | 1424-8220 | - |
dc.identifier.uri | https://hdl.handle.net/10371/203117 | - |
dc.description.abstract | In this research, a high performance silicon nanowire field-effect transistor ( transconductance as high as 34 mu S and sensitivity as 84 nS/mV) is extensively studied and directly compared with planar passive microelectrode arrays for neural recording application. Electrical and electrochemical characteristics are carefully characterized in a very well-controlled manner. We especially focused on the signal amplification capability and intrinsic noise of the transistors. A neural recording system using both silicon nanowire field-effect transistor-based active-type microelectrode array and platinum black microelectrode-based passive-type microelectrode array are implemented and compared. An artificial neural spike signal is supplied as input to both arrays through a buffer solution and recorded simultaneously. Recorded signal intensity by the silicon nanowire transistor was precisely determined by an electrical characteristic of the transistor, transconductance. Signal-to-noise ratio was found to be strongly dependent upon the intrinsic 1/f noise of the silicon nanowire transistor. We found how signal strength is determined and how intrinsic noise of the transistor determines signal-to-noise ratio of the recorded neural signals. This study provides in-depth understanding of the overall neural recording mechanism using silicon nanowire transistors and solid design guideline for further improvement and development. | - |
dc.language | 영어 | - |
dc.publisher | Multidisciplinary Digital Publishing Institute (MDPI) | - |
dc.title | Feasibility Study of Extended-Gate-Type Silicon Nanowire Field-Effect Transistors for Neural Recording | - |
dc.type | Article | - |
dc.identifier.doi | 10.3390/s17040705 | - |
dc.citation.journaltitle | Sensors | - |
dc.identifier.wosid | 000400822900046 | - |
dc.identifier.scopusid | 2-s2.0-85016482715 | - |
dc.citation.number | 4 | - |
dc.citation.startpage | 705 | - |
dc.citation.volume | 17 | - |
dc.description.isOpenAccess | Y | - |
dc.contributor.affiliatedAuthor | Kang, Hongki | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | ACTION-POTENTIALS | - |
dc.subject.keywordPlus | 1/F NOISE | - |
dc.subject.keywordPlus | NEURONS | - |
dc.subject.keywordPlus | ARRAYS | - |
dc.subject.keywordPlus | MICROELECTRODES | - |
dc.subject.keywordPlus | CHANNEL | - |
dc.subject.keywordAuthor | silicon nanowire | - |
dc.subject.keywordAuthor | field-effect transistor (FETs) | - |
dc.subject.keywordAuthor | neural recording | - |
dc.subject.keywordAuthor | 1/f noise | - |
dc.subject.keywordAuthor | random telegraph noise | - |
dc.subject.keywordAuthor | microelectrode array | - |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.