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Fully Inkjet-Printed Transparent Oxide Thin Film Transistors Using a Fugitive Wettability Switch
Cited 91 time in
Web of Science
Cited 103 time in Scopus
- Authors
- Issue Date
- 2015-07
- Publisher
- Wiley-VCH Verlag
- Citation
- Advanced Electronic Materials, Vol.1 No.7, p. 1500086
- Abstract
- Inkjetted transparent metal-oxide-based transistors that consist of an inkjetted bottom antimony-doped tin oxide (ATO) gate electrode, an inkjetted ZrO2 insulator, an inkjetted ATO source/drain electrode, and an inkjetted SnO2 semiconductor are reported. The devices exhibit excellent electrical characteristics and deliver a saturation mobility of approximate to 11 cm(2) V-1 s, a 10(6) on/off ratio, and a 0.18 V/decade sub-threshold slope while operating at low voltage (<5.0 V).
- ISSN
- 2199-160X
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