Analysis of flicker noise in two-dimensional multilayer MoS<sub>2</sub> transistors

Abstract

Using low-frequency noise (LFN) analysis, we examined the quality of the semiconductor, oxide, and oxide-semiconductor interface of back-gated multilayer MoS2 transistors. We also investigated the mechanism of the LFN and extracted c exponents from the LFN behavior, 1/f(gamma); the value of gamma was >1 at negative gate bias because of active slow traps. As V-G increased, the slow traps were filled and thus gamma decreased, stabilizing at approximate to 0.95. Various other parameters extracted from the LFN indicated that the carrier number fluctuation (Delta n) model was the dominant origin of the LFN. The multilayer MoS2 structure had better noise immunity than a single-layer case in air. (C) 2014 AIP Publishing LLC.