Publications

Detailed Information

Analysis of flicker noise in two-dimensional multilayer MoS<sub>2</sub> transistors

Cited 56 time in Web of Science Cited 57 time in Scopus
Authors

Kwon, Hyuk-Jun; Kang, Hongki; Jang, Jaewon; Kim, Sunkook; Grigoropoulos, Costas P.

Issue Date
2014-02
Publisher
American Institute of Physics
Citation
Applied Physics Letters, Vol.104 No.8, p. 083110
Abstract
Using low-frequency noise (LFN) analysis, we examined the quality of the semiconductor, oxide, and oxide-semiconductor interface of back-gated multilayer MoS2 transistors. We also investigated the mechanism of the LFN and extracted c exponents from the LFN behavior, 1/f(gamma); the value of gamma was >1 at negative gate bias because of active slow traps. As V-G increased, the slow traps were filled and thus gamma decreased, stabilizing at approximate to 0.95. Various other parameters extracted from the LFN indicated that the carrier number fluctuation (Delta n) model was the dominant origin of the LFN. The multilayer MoS2 structure had better noise immunity than a single-layer case in air. (C) 2014 AIP Publishing LLC.
ISSN
0003-6951
URI
https://hdl.handle.net/10371/203127
DOI
https://doi.org/10.1063/1.4866785
Files in This Item:
There are no files associated with this item.
Appears in Collections:

Related Researcher

  • College of Medicine
  • Department of Medicine
Research Area Biosensors, Microelectronics, Neurotechnology

Altmetrics

Item View & Download Count

  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Share