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Analytical threshold voltage model for double-gate MOSFETs with localized charges
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kang, Hongki | - |
| dc.contributor.author | Han, Jin-Woo | - |
| dc.contributor.author | Choi, Yang-Kyu | - |
| dc.date.accessioned | 2024-05-16T04:45:10Z | - |
| dc.date.available | 2024-05-16T04:45:10Z | - |
| dc.date.created | 2024-04-30 | - |
| dc.date.created | 2024-04-30 | - |
| dc.date.issued | 2008-08 | - |
| dc.identifier.citation | IEEE Electron Device Letters, Vol.29 No.8, pp.927-930 | - |
| dc.identifier.issn | 0741-3106 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/203136 | - |
| dc.description.abstract | An analytical threshold voltage model for double-gate MOSFETs with localized charges is developed. From the 2-D Poisson's equation with parabolic potential approximation, a compact threshold voltage model is derived. The proposed model is then verified with a 2-D device simulator. The model can be used to investigate hot-carrier-induced device degradation for various device dimensions and various charge distributions. | - |
| dc.language | 영어 | - |
| dc.publisher | Institute of Electrical and Electronics Engineers | - |
| dc.title | Analytical threshold voltage model for double-gate MOSFETs with localized charges | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1109/LED.2008.2000965 | - |
| dc.citation.journaltitle | IEEE Electron Device Letters | - |
| dc.identifier.wosid | 000258096000032 | - |
| dc.identifier.scopusid | 2-s2.0-48649092368 | - |
| dc.citation.endpage | 930 | - |
| dc.citation.number | 8 | - |
| dc.citation.startpage | 927 | - |
| dc.citation.volume | 29 | - |
| dc.description.isOpenAccess | N | - |
| dc.contributor.affiliatedAuthor | Kang, Hongki | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.subject.keywordAuthor | double-gate (DG) MOSFETs | - |
| dc.subject.keywordAuthor | hot-carrier effects (HCEs) | - |
| dc.subject.keywordAuthor | localized charge | - |
| dc.subject.keywordAuthor | surface potential | - |
| dc.subject.keywordAuthor | threshold voltage | - |
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