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In-plane anisotropic two-dimensional materials for twistronics

DC Field Value Language
dc.contributor.authorKim, Hangyel-
dc.contributor.authorKim, Changheon-
dc.contributor.authorJung, Yeonwoong-
dc.contributor.authorKim, Namwon-
dc.contributor.authorSon, Jangyup-
dc.contributor.authorLee, Gwan-Hyoung-
dc.date.accessioned2024-05-20T06:11:23Z-
dc.date.available2024-05-20T06:11:23Z-
dc.date.created2024-05-20-
dc.date.issued2024-06-
dc.identifier.citationNanotechnology, Vol.35 No.26, p. 262501-
dc.identifier.issn0957-4484-
dc.identifier.urihttps://hdl.handle.net/10371/203429-
dc.description.abstractIn-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this perspective we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T ' and T-d phases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.-
dc.language영어-
dc.publisherInstitute of Physics Publishing-
dc.titleIn-plane anisotropic two-dimensional materials for twistronics-
dc.typeArticle-
dc.identifier.doi10.1088/1361-6528/ad2c53-
dc.citation.journaltitleNanotechnology-
dc.identifier.wosid001201714000001-
dc.identifier.scopusid2-s2.0-85190527933-
dc.citation.number26-
dc.citation.startpage262501-
dc.citation.volume35-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorLee, Gwan-Hyoung-
dc.type.docTypeEditorial Material-
dc.description.journalClass1-
dc.subject.keywordPlusSTRUCTURAL PHASE-TRANSITION-
dc.subject.keywordPlusBLACK PHOSPHORUS-
dc.subject.keywordPlusFEW-LAYER-
dc.subject.keywordPlusELECTRICAL ANISOTROPY-
dc.subject.keywordPlusELECTRONIC-STRUCTURE-
dc.subject.keywordPlusOPTICAL ANISOTROPY-
dc.subject.keywordPlusMONOLAYER-
dc.subject.keywordPlusSEMICONDUCTOR-
dc.subject.keywordPlusPOLARIZATION-
dc.subject.keywordPlusEXCITONS-
dc.subject.keywordAuthortwo-dimensional materials-
dc.subject.keywordAuthorin-plane anisotropy-
dc.subject.keywordAuthorvan der Waals heterostructure-
dc.subject.keywordAuthormoire superlattice-
dc.subject.keywordAuthortwistronics-
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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