Publications
Detailed Information
Homogeneous 2D MoTe<sub>2</sub> p-n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, June Yeong | - |
dc.contributor.author | Pezeshki, Atiye | - |
dc.contributor.author | Oh, Sehoon | - |
dc.contributor.author | Kim, Jin Sung | - |
dc.contributor.author | Lee, Young Tack | - |
dc.contributor.author | Yu, Sanghyuck | - |
dc.contributor.author | Hwang, Do Kyung | - |
dc.contributor.author | Lee, Gwan-Hyoung | - |
dc.contributor.author | Choi, Hyoung Joon | - |
dc.contributor.author | Im, Seongil | - |
dc.date.accessioned | 2024-05-20T06:13:42Z | - |
dc.date.available | 2024-05-20T06:13:42Z | - |
dc.date.created | 2024-05-20 | - |
dc.date.issued | 2017-08 | - |
dc.identifier.citation | Advanced Materials, Vol.29 No.30, p. 1701798 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.uri | https://hdl.handle.net/10371/203471 | - |
dc.description.abstract | Recently, alpha-MoTe2, a 2D transition-metal dichalcogenide (TMD), has shown outstanding properties, aiming at future electronic devices. Such TMD structures without surface dangling bonds make the 2D alpha-MoTe2 a more favorable candidate than conventional 3D Si on the scale of a few nanometers. The bandgap of thin alpha-MoTe2 appears close to that of Si and is quite smaller than those of other typical TMD semiconductors. Even though there have been a few attempts to control the charge-carrier polarity of MoTe2, functional devices such as p-n junction or complementary metal-oxide-semiconductor (CMOS) inverters have not been reported. Here, we demonstrate a 2D CMOS inverter and p-n junction diode in a single alpha-MoTe2 nanosheet by a straightforward selective doping technique. In a single alpha-MoTe2 flake, an initially p-doped channel is selectively converted to an n-doped region with high electron mobility of 18 cm(2) V-1 s(-1) by atomic-layer-deposition-induced H-doping. The ultrathin CMOS inverter exhibits a high DC voltage gain of 29, an AC gain of 18 at 1 kHz, and a low static power consumption of a few nanowatts. The results show a great potential of alpha-MoTe2 for future electronic devices based on 2D semiconducting materials. | - |
dc.language | 영어 | - |
dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.title | Homogeneous 2D MoTe2 p-n Junctions and CMOS Inverters formed by Atomic-Layer-Deposition-Induced Doping | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/adma.201701798 | - |
dc.citation.journaltitle | Advanced Materials | - |
dc.identifier.wosid | 000407048800032 | - |
dc.identifier.scopusid | 2-s2.0-85020197087 | - |
dc.citation.number | 30 | - |
dc.citation.startpage | 1701798 | - |
dc.citation.volume | 29 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Gwan-Hyoung | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | COMPLEMENTARY INVERTERS | - |
dc.subject.keywordPlus | BAND-GAP | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | LOGIC | - |
dc.subject.keywordPlus | NANOSHEET | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | BEHAVIOR | - |
dc.subject.keywordPlus | CHANNEL | - |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.