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Van der Waals Epitaxially Grown Molecular Crystal Dielectric Sb2O3 for 2D Electronics
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ryu, Huije | - |
dc.contributor.author | Kim, Hyunjun | - |
dc.contributor.author | Jeong, Jae Hwan | - |
dc.contributor.author | Kim, Byeong Chan | - |
dc.contributor.author | Watanabe, Kenji | - |
dc.contributor.author | Taniguchi, Takashi | - |
dc.contributor.author | Lee, Gwan-Hyoung | - |
dc.date.accessioned | 2024-05-20T07:28:27Z | - |
dc.date.available | 2024-05-20T07:28:27Z | - |
dc.date.created | 2024-05-20 | - |
dc.date.created | 2024-05-20 | - |
dc.date.issued | 2024-05 | - |
dc.identifier.citation | ACS Nano, Vol.18 No.20, pp.13098-13105 | - |
dc.identifier.issn | 1936-0851 | - |
dc.identifier.uri | https://hdl.handle.net/10371/203510 | - |
dc.description.abstract | Two-dimensional (2D) semiconducting materials have attracted significant interest as promising candidates for channel materials owing to their high mobility and gate tunability at atomic-layer thickness. However, the development of 2D electronics is impeded due to the difficulty in formation of high-quality dielectrics with a clean and nondestructive interface. Here, we report the direct van der Waals epitaxial growth of a molecular crystal dielectric, Sb2O3, on 2D materials by physical vapor deposition. The grown Sb2O3 nanosheets showed epitaxial relations of 0 and 180° with the 2D template, maintaining high crystallinity and an ultrasharp vdW interface with the 2D materials. As a result, the Sb2O3 nanosheets exhibited a high breakdown field of 18.6 MV/cm for 2L Sb2O3 with a thickness of 1.3 nm and a very low leakage current of 2.47 × 10-7 A/cm2 for 3L Sb2O3 with a thickness of 1.96 nm. We also observed two types of grain boundaries (GBs) with misorientation angles of 0 and 60°. The 0°-GB with a well-stitched boundary showed higher electrical and thermal stabilities than those of the 60°-GB with a disordered boundary. Our work demonstrates a method to epitaxially grow molecular crystal dielectrics on 2D materials without causing any damage, a requirement for high-performance 2D electronics. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | Van der Waals Epitaxially Grown Molecular Crystal Dielectric Sb2O3 for 2D Electronics | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsnano.4c01883 | - |
dc.citation.journaltitle | ACS Nano | - |
dc.identifier.wosid | 001225126200001 | - |
dc.identifier.scopusid | 2-s2.0-85192478357 | - |
dc.citation.endpage | 13105 | - |
dc.citation.number | 20 | - |
dc.citation.startpage | 13098 | - |
dc.citation.volume | 18 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Gwan-Hyoung | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | HIGH-QUALITY | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | TRANSISTORS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordAuthor | 2D electronics | - |
dc.subject.keywordAuthor | grain boundary | - |
dc.subject.keywordAuthor | molecular crystal dielectric | - |
dc.subject.keywordAuthor | van der Waals epitaxy | - |
dc.subject.keywordAuthor | α-Sb2O3 | - |
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