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Effect of defects on the intrinsic strength and stiffness of graphene

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dc.contributor.authorZandiatashbar, Ardavan-
dc.contributor.authorLee, Gwan-Hyoung-
dc.contributor.authorAn, Sung Joo-
dc.contributor.authorLee, Sunwoo-
dc.contributor.authorMathew, Nithin-
dc.contributor.authorTerrones, Mauricio-
dc.contributor.authorHayashi, Takuya-
dc.contributor.authorPicu, Catalin R.-
dc.contributor.authorHone, James-
dc.contributor.authorKoratkar, Nikhil-
dc.date.accessioned2024-05-20T07:29:34Z-
dc.date.available2024-05-20T07:29:34Z-
dc.date.created2024-05-20-
dc.date.issued2014-01-
dc.identifier.citationNature Communications, Vol.5, p. 3186-
dc.identifier.urihttps://hdl.handle.net/10371/203529-
dc.description.abstractIt is important from a fundamental standpoint and for practical applications to understand how the mechanical properties of graphene are influenced by defects. Here we report that the two-dimensional elastic modulus of graphene is maintained even at a high density of sp(3)-type defects. Moreover, the breaking strength of defective graphene is only similar to 14% smaller than its pristine counterpart in the sp(3)-defect regime. By contrast, we report a significant drop in the mechanical properties of graphene in the vacancy-defect regime. We also provide a mapping between the Raman spectra of defective graphene and its mechanical properties. This provides a simple, yet non-destructive methodology to identify graphene samples that are still mechanically functional. By establishing a relationship between the type and density of defects and the mechanical properties of graphene, this work provides important basic information for the rational design of composites and other systems utilizing the high modulus and strength of graphene.-
dc.language영어-
dc.publisherNature Publishing Group-
dc.titleEffect of defects on the intrinsic strength and stiffness of graphene-
dc.typeArticle-
dc.identifier.doi10.1038/ncomms4186-
dc.citation.journaltitleNature Communications-
dc.identifier.wosid000331118200003-
dc.identifier.scopusid2-s2.0-84893087344-
dc.citation.startpage3186-
dc.citation.volume5-
dc.description.isOpenAccessY-
dc.contributor.affiliatedAuthorLee, Gwan-Hyoung-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusREACTIVE FORCE-FIELD-
dc.subject.keywordPlusMECHANICAL-PROPERTIES-
dc.subject.keywordPlusELASTIC PROPERTIES-
dc.subject.keywordPlusSHEETS-
dc.subject.keywordPlusOXIDE-
dc.subject.keywordPlusDEPOSITION-
dc.subject.keywordPlusREDUCTION-
dc.subject.keywordPlusFRACTURE-
dc.subject.keywordPlusFILMS-
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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