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Tightly bound trions in monolayer MoS 2

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dc.contributor.authorMak, Kin Fai-
dc.contributor.authorHe, Keliang-
dc.contributor.authorLee, Changgu-
dc.contributor.authorLee, Gwan Hyoung-
dc.contributor.authorHone, James-
dc.contributor.authorHeinz, Tony F.-
dc.contributor.authorShan, Jie-
dc.date.accessioned2024-05-20T07:29:54Z-
dc.date.available2024-05-20T07:29:54Z-
dc.date.created2024-05-20-
dc.date.issued2013-03-
dc.identifier.citationNature Materials, Vol.12 No.3, pp.207-211-
dc.identifier.issn1476-1122-
dc.identifier.urihttps://hdl.handle.net/10371/203535-
dc.description.abstractTwo-dimensional (2D) atomic crystals, such as graphene and transition-metal dichalcogenides, have emerged as a new class of materials with remarkable physical properties(1). In contrast to graphene, monolayer MoS2 is a non-centrosymmetric material with a direct energy gap(2,5). Strong photoluminescence(2,3) a current on/off ratio exceeding 10(8) in field-effect transistors(6), and efficient valley and spin control by optical helicity(7-9) have recently been demonstrated in this material. Here we report the spectroscopic identification in a monolayer MoS2 field-effect transistor of tightly bound negative trions, a quasiparticle composed of two electrons and a hole. These quasiparticles, which can be optically created with valley and spin polarized holes, have no analogue in conventional semiconductors. They also possess a large binding energy (similar to 20 meV), rendering them significant even at room temperature. Our results open up possibilities both for fundamental studies of many-body interactions and for optoelectronic and valleytronic applications in 2D atomic crystals.-
dc.language영어-
dc.publisherNature Publishing Group-
dc.titleTightly bound trions in monolayer MoS 2-
dc.typeArticle-
dc.identifier.doi10.1038/NMAT3505-
dc.citation.journaltitleNature Materials-
dc.identifier.wosid000315707200017-
dc.identifier.scopusid2-s2.0-84875437247-
dc.citation.endpage211-
dc.citation.number3-
dc.citation.startpage207-
dc.citation.volume12-
dc.description.isOpenAccessY-
dc.contributor.affiliatedAuthorLee, Gwan Hyoung-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlus2-DIMENSIONAL ELECTRON-GAS-
dc.subject.keywordPlusOPTICAL-ABSORPTION-
dc.subject.keywordPlusVALLEY POLARIZATION-
dc.subject.keywordPlusSPECTRA-
dc.subject.keywordPlusEXCITONS-
dc.subject.keywordPlusSTATES-
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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