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Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices

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dc.contributor.authorChoi, Min Sup-
dc.contributor.authorLee, Gwan-Hyoung-
dc.contributor.authorYu, Young-Jun-
dc.contributor.authorLee, Dae-Yeong-
dc.contributor.authorLee, Seung Hwan-
dc.contributor.authorKim, Philip-
dc.contributor.authorHone, James-
dc.contributor.authorYoo, Won Jong-
dc.date.accessioned2024-05-20T07:29:57Z-
dc.date.available2024-05-20T07:29:57Z-
dc.date.created2024-05-20-
dc.date.issued2013-03-
dc.identifier.citationNature Communications, Vol.4, p. 1624-
dc.identifier.urihttps://hdl.handle.net/10371/203536-
dc.description.abstractAtomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene and molybdenum disulphide were employed as both channel and charge-trapping layers, whereas hexagonal boron nitride was used as a tunnel barrier. In these ultrathin heterostructured memory devices, the atomically thin molybdenum disulphide or graphene-trapping layer stores charge tunnelled through hexagonal boron nitride, serving as a floating gate to control the charge transport in the graphene or molybdenum disulphide channel. By varying the thicknesses of two-dimensional materials and modifying the stacking order, the hysteresis and conductance polarity of the field-effect transistor can be controlled. These devices show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials.-
dc.language영어-
dc.publisherNature Publishing Group-
dc.titleControlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices-
dc.typeArticle-
dc.identifier.doi10.1038/ncomms2652-
dc.citation.journaltitleNature Communications-
dc.identifier.wosid000318873900077-
dc.identifier.scopusid2-s2.0-84875886821-
dc.citation.startpage1624-
dc.citation.volume4-
dc.description.isOpenAccessY-
dc.contributor.affiliatedAuthorLee, Gwan-Hyoung-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusHIGH-QUALITY-
dc.subject.keywordPlusTRANSPORT-
dc.subject.keywordPlusELECTRON-
dc.subject.keywordPlusGROWTH-
dc.subject.keywordPlusFILMS-
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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