Publications
Detailed Information
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Min Sup | - |
dc.contributor.author | Lee, Gwan-Hyoung | - |
dc.contributor.author | Yu, Young-Jun | - |
dc.contributor.author | Lee, Dae-Yeong | - |
dc.contributor.author | Lee, Seung Hwan | - |
dc.contributor.author | Kim, Philip | - |
dc.contributor.author | Hone, James | - |
dc.contributor.author | Yoo, Won Jong | - |
dc.date.accessioned | 2024-05-20T07:29:57Z | - |
dc.date.available | 2024-05-20T07:29:57Z | - |
dc.date.created | 2024-05-20 | - |
dc.date.issued | 2013-03 | - |
dc.identifier.citation | Nature Communications, Vol.4, p. 1624 | - |
dc.identifier.uri | https://hdl.handle.net/10371/203536 | - |
dc.description.abstract | Atomically thin two-dimensional materials have emerged as promising candidates for flexible and transparent electronic applications. Here we show non-volatile memory devices, based on field-effect transistors with large hysteresis, consisting entirely of stacked two-dimensional materials. Graphene and molybdenum disulphide were employed as both channel and charge-trapping layers, whereas hexagonal boron nitride was used as a tunnel barrier. In these ultrathin heterostructured memory devices, the atomically thin molybdenum disulphide or graphene-trapping layer stores charge tunnelled through hexagonal boron nitride, serving as a floating gate to control the charge transport in the graphene or molybdenum disulphide channel. By varying the thicknesses of two-dimensional materials and modifying the stacking order, the hysteresis and conductance polarity of the field-effect transistor can be controlled. These devices show high mobility, high on/off current ratio, large memory window and stable retention, providing a promising route towards flexible and transparent memory devices utilizing atomically thin two-dimensional materials. | - |
dc.language | 영어 | - |
dc.publisher | Nature Publishing Group | - |
dc.title | Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices | - |
dc.type | Article | - |
dc.identifier.doi | 10.1038/ncomms2652 | - |
dc.citation.journaltitle | Nature Communications | - |
dc.identifier.wosid | 000318873900077 | - |
dc.identifier.scopusid | 2-s2.0-84875886821 | - |
dc.citation.startpage | 1624 | - |
dc.citation.volume | 4 | - |
dc.description.isOpenAccess | Y | - |
dc.contributor.affiliatedAuthor | Lee, Gwan-Hyoung | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | HIGH-QUALITY | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | ELECTRON | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | FILMS | - |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.