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Inking Elastomeric Stamps with Micro-Patterned, Single Layer Graphene to Create High-Performance OFETs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kang, Seok Ju | - |
| dc.contributor.author | Kim, Bumjung | - |
| dc.contributor.author | Kim, Keun Soo | - |
| dc.contributor.author | Zhao, Yue | - |
| dc.contributor.author | Chen, Zheyuan | - |
| dc.contributor.author | Lee, Gwan Hyoung | - |
| dc.contributor.author | Hone, James | - |
| dc.contributor.author | Kim, Philip | - |
| dc.contributor.author | Nuckolls, Colin | - |
| dc.date.accessioned | 2024-05-20T07:30:21Z | - |
| dc.date.available | 2024-05-20T07:30:21Z | - |
| dc.date.created | 2024-05-20 | - |
| dc.date.issued | 2011-08 | - |
| dc.identifier.citation | Advanced Materials, Vol.23 No.31, pp.3531-3535 | - |
| dc.identifier.issn | 0935-9648 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/203543 | - |
| dc.description.abstract | Pattern array of CVD-grown single layer graphene (SLG) is demonstrated by using a micro-patterned PDMS stamp. These ultrathin SLG electrodes can be used as the source and drain for organic field effect transistors. The devices have high hole mobilities exceeding 10 cm(2)/Vs, high on-off current ratios, i.e., larger than 10, and a low threshold voltage for switching. | - |
| dc.language | 영어 | - |
| dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
| dc.title | Inking Elastomeric Stamps with Micro-Patterned, Single Layer Graphene to Create High-Performance OFETs | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1002/adma.201101570 | - |
| dc.citation.journaltitle | Advanced Materials | - |
| dc.identifier.wosid | 000294745300008 | - |
| dc.identifier.scopusid | 2-s2.0-80051686207 | - |
| dc.citation.endpage | 3535 | - |
| dc.citation.number | 31 | - |
| dc.citation.startpage | 3531 | - |
| dc.citation.volume | 23 | - |
| dc.description.isOpenAccess | Y | - |
| dc.contributor.affiliatedAuthor | Lee, Gwan Hyoung | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
| dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
| dc.subject.keywordPlus | LARGE-AREA | - |
| dc.subject.keywordPlus | FILMS | - |
| dc.subject.keywordPlus | RUBRENE | - |
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- College of Engineering
- Department of Materials Science & Engineering
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