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Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kang, M. | - |
dc.contributor.author | Jeon, S. | - |
dc.contributor.author | Jen, T. | - |
dc.contributor.author | Lee, J. -E. | - |
dc.contributor.author | Sih, V. | - |
dc.contributor.author | Goldman, R. S. | - |
dc.date.accessioned | 2024-05-21T02:25:44Z | - |
dc.date.available | 2024-05-21T02:25:44Z | - |
dc.date.created | 2024-05-21 | - |
dc.date.created | 2024-05-21 | - |
dc.date.created | 2024-05-21 | - |
dc.date.issued | 2017-07 | - |
dc.identifier.citation | JOURNAL OF APPLIED PHYSICS, Vol.122 No.3 | - |
dc.identifier.issn | 0021-8979 | - |
dc.identifier.uri | https://hdl.handle.net/10371/203563 | - |
dc.description.abstract | We introduce a novel approach to the seamless integration of plasmonic nanoparticle (NP) arrays into semiconductor layers and demonstrate their enhanced photoluminescence (PL) efficiency. Our approach utilizes focused ion beam-induced self-assembly of close-packed arrays of Ga NPs with tailorable NP diameters, followed by overgrowth of GaAs layers using molecular beam epitaxy. Using a combination of PL spectroscopy and electromagnetic computations, we identify a regime of Ga NP diameter and overgrown GaAs layer thickness where NP-array-enhanced absorption in GaAs leads to enhanced GaAs near-band-edge (NBE) PL efficiency, surpassing that of high-quality epitaxial GaAs layers. As the NP array depth and size are increased, the reduction in spontaneous emission rate overwhelms the NP-array-enhanced absorption, leading to a reduced NBE PL efficiency. This approach provides an opportunity to enhance the PL efficiency of a wide variety of semiconductor heterostructures. Published by AIP Publishing. | - |
dc.language | 영어 | - |
dc.publisher | AMER INST PHYSICS | - |
dc.title | Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.4990946 | - |
dc.citation.journaltitle | JOURNAL OF APPLIED PHYSICS | - |
dc.identifier.wosid | 000406128800002 | - |
dc.identifier.scopusid | 2-s2.0-85025072188 | - |
dc.citation.number | 3 | - |
dc.citation.volume | 122 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, J. -E. | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | GALLIUM NANOPARTICLES | - |
dc.subject.keywordPlus | DIELECTRIC LAYERS | - |
dc.subject.keywordPlus | SEMICONDUCTOR | - |
dc.subject.keywordPlus | METAL | - |
dc.subject.keywordPlus | RESONANCE | - |
dc.subject.keywordPlus | DEPENDENCE | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | EMISSION | - |
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