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Ground-state exciton emission of In As quantum dots produced by focused-ion-beam-directed nucleation

Cited 3 time in Web of Science Cited 3 time in Scopus
Authors

Lee, J. -E.; Saucer, T. W.; Martin, A. J.; Tien, D.; Millunchick, J. M.; Sih, V.

Issue Date
2013-01
Publisher
ELSEVIER SCIENCE BV
Citation
JOURNAL OF LUMINESCENCE, Vol.133, pp.117-120
Abstract
We report on scanning micro-photoluminescence measurements on InAs quantum dots that were patterned using an in vacuo focused ion beam. The focused ion beam produced a square array of holes with an array spacing of 2 gm, upon which multiple layers of InAs and GaAs were deposited. Two-dimensional mapping of the luminescence spatially and spectrally resolves the emission from individual dots. At some positions, multiple emission peaks are observed, which could have originated from (i) different exciton transitions of the same quantum dot, or (ii) different quantum dots. Power dependence measurements reveal that the emission increases linearly with power, and maps of the emission show that the positions of each peak are spatially separated, suggesting that the peaks are ground-state exciton emission from different dots. (c) 2011 Elsevier B.V. All rights reserved.
ISSN
0022-2313
URI
https://hdl.handle.net/10371/203570
DOI
https://doi.org/10.1016/j.jlumin.2011.10.008
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  • College of Natural Sciences
  • Department of Physics and Astronomy
Research Area Condensed Matter Physics, Nanoscale Physics and Photonics, 나노 물리와 나노 광자학, 응집 물질 물리

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