Publications

Detailed Information

Photoluminescence of patterned arrays of vertically stacked InAs/GaAs quantum dots

Cited 13 time in Web of Science Cited 13 time in Scopus
Authors

Saucer, T. W.; Lee, J-E.; Martin, A. J.; Tien, D.; Millunchick, J. M.; Sih, V.

Issue Date
2011-02
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
SOLID STATE COMMUNICATIONS, Vol.151 No.4, pp.269-271
Abstract
We report on photoluminescence measurements of vertically stacked InAs/GaAs quantum dots grown by molecular beam epitaxy on focused ion beam patterned hole arrays with varying array spacing. Quantum dot emission at 1.24 eV was observed only on patterned regions, demonstrating preferential nucleation of optically active dots at desired locations and below the critical thickness for dot formation at these growth conditions. Photoluminescence measurements as a function of varying focused ion beam irradiated hole spacing showed that the quantum dot emission intensity increased with decreasing array periodicity, consistent with increasing dot density. (C) 2010 Elsevier Ltd. All rights reserved.
ISSN
0038-1098
URI
https://hdl.handle.net/10371/203578
DOI
https://doi.org/10.1016/j.ssc.2010.12.020
Files in This Item:
There are no files associated with this item.
Appears in Collections:

Related Researcher

  • College of Natural Sciences
  • Department of Physics and Astronomy
Research Area Condensed Matter Physics, Nanoscale Physics and Photonics, 나노 물리와 나노 광자학, 응집 물질 물리

Altmetrics

Item View & Download Count

  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Share