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Reaction Gas Ratio Effect on the Growth of a Diamond Film Using Microwave Plasma-Enhanced Chemical Vapor Deposition
DC Field | Value | Language |
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dc.contributor.author | Joung, Yeun Ho | - |
dc.contributor.author | Kang, Feel Soon | - |
dc.contributor.author | Lee, Seung Jun | - |
dc.contributor.author | Kang, Hyunil I. | - |
dc.contributor.author | Choi, Won Seok | - |
dc.contributor.author | Choi, Young Kwan | - |
dc.contributor.author | Song, Bong Shik | - |
dc.contributor.author | Lee, Jae Hyeong | - |
dc.contributor.author | Hong, Byung Hee | - |
dc.date.accessioned | 2024-07-12T01:57:52Z | - |
dc.date.available | 2024-07-12T01:57:52Z | - |
dc.date.created | 2024-06-19 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.citation | Journal of Nanoscience and Nanotechnology, Vol.16 No.5, pp.5295-5297 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://hdl.handle.net/10371/204643 | - |
dc.description.abstract | In this study, diamond films were prepared using the microwave plasma-enhanced chemical vapor deposition (PECVD) system, which included a DC bias system to enhance the nucleation of the films. The films were synthesized on Si wafers with different ratios of methane (CH4) and hydrogen (H-2) gases. We have studied the effects of the CH4-to-H-2 ratio on the structural and optical properties of diamond films. The thickness and surface profile of the films were characterized via field emission scanning electron microscopy (FE-SEM). Raman was used to investigate the structural properties of the diamond films. The refractive indexes as functions of the CH4-to-H-2 ratio were measured using an ellipsometer. The FE-SEM analysis showed that the 3 and 5 sccm CH4 created diamond films. The Raman analysis indicated that a nanocrystalline diamond film was formed at 3 sccm; a general diamond film, at 5 sccm; and films similar to the a-C:H film, at 7 sccm. The ellipsometer measurement showed that the refractive index of the synthesized diamond film was around 2.42 at 3 sccm. This value decreased as the CH4 volume increased. | - |
dc.language | 영어 | - |
dc.publisher | American Scientific Publishers | - |
dc.title | Reaction Gas Ratio Effect on the Growth of a Diamond Film Using Microwave Plasma-Enhanced Chemical Vapor Deposition | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jnn.2016.12212 | - |
dc.citation.journaltitle | Journal of Nanoscience and Nanotechnology | - |
dc.identifier.wosid | 000386123100174 | - |
dc.identifier.scopusid | 2-s2.0-84971508926 | - |
dc.citation.endpage | 5297 | - |
dc.citation.number | 5 | - |
dc.citation.startpage | 5295 | - |
dc.citation.volume | 16 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Byung Hee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | NANOCRYSTALLINE DIAMOND | - |
dc.subject.keywordPlus | NUCLEATION | - |
dc.subject.keywordPlus | SILICON | - |
dc.subject.keywordPlus | SUBSTRATE | - |
dc.subject.keywordAuthor | Diamond Film | - |
dc.subject.keywordAuthor | Reaction Gas Ratio | - |
dc.subject.keywordAuthor | Microwave PECVD | - |
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