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Monolayer graphene mode-locked 63-fs Ti:sapphire laser

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dc.contributor.authorKim, Jun Wan-
dc.contributor.authorBaek, In Hyung-
dc.contributor.authorLee, Hwang Woon-
dc.contributor.authorBae, Sukang-
dc.contributor.authorHong, Byung Hee-
dc.contributor.authorAhn, Yeong Hwan-
dc.contributor.authorYeom, Dong Il-
dc.contributor.authorRotermund, Fabian-
dc.date.accessioned2024-07-12T01:58:12Z-
dc.date.available2024-07-12T01:58:12Z-
dc.date.created2024-06-19-
dc.date.issued2012-07-
dc.identifier.citationTechnical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012, pp.673-674-
dc.identifier.issn0000-0000-
dc.identifier.urihttps://hdl.handle.net/10371/204649-
dc.description.abstractPassive mode-locking of a Ti:sapphire laser employing monolayer graphene as saturable absorber was demonstrated for the first time. The large-area, high-quality monolayer graphene was fabricated by chemical vapor deposition method. Without any additional treatment, monolayer graphene shows ultrafast recovery time and nonlinear absorption properties appropriate for the bulk laser mode-locking near 800 nm. The graphene mode-locked Ti:sapphire laser delivers 63-fs pulses with a maximum output power of 480 mW. © 2012 IEEE.-
dc.language영어-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleMonolayer graphene mode-locked 63-fs Ti:sapphire laser-
dc.typeArticle-
dc.identifier.doi10.1109/OECC.2012.6276785-
dc.citation.journaltitleTechnical Digest - 2012 17th Opto-Electronics and Communications Conference, OECC 2012-
dc.identifier.scopusid2-s2.0-84867604308-
dc.citation.endpage674-
dc.citation.startpage673-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorHong, Byung Hee-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
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  • College of Natural Sciences
  • Department of Chemistry
Research Area Nanofabrication and characterization, Nanomaterials Synthesis, Quantum mechanics and molecular dynamics simulation, 나노재료 합성, 나노제조 및 특성화, 양자역학 및 분자역학 시뮬레이션

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