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Growth of graphene layers for thin films
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Hong, Byung Hee | - |
dc.contributor.author | Jeon, H.R. | - |
dc.date.accessioned | 2024-07-12T01:58:26Z | - |
dc.date.available | 2024-07-12T01:58:26Z | - |
dc.date.created | 2024-06-19 | - |
dc.date.issued | 2011-07 | - |
dc.identifier.citation | Thin Film Growth: Physics, Materials Science and Applications, pp.211-227 | - |
dc.identifier.uri | https://hdl.handle.net/10371/204653 | - |
dc.description.abstract | Graphene has received considerable attention due to its fascinating physical properties such as quantum electronic transport, a tunable band gap, extremely high mobility, high elasticity and electromechanical modulation. This chapter describes the direct synthesis of large-scale graphene films using chemical vapour deposition on thin nickel layers, and presents two different methods of patterning the films and transferring them to arbitrary substrates. Furthermore, we detail the roll-to-roll production and wet chemical doping of predominantly monolayer 30-inch graphene films grown by chemical vapour deposition onto flexible copper substrates. © 2011 Woodhead Publishing Limited. All rights reserved. | - |
dc.language | 영어 | - |
dc.publisher | Elsevier Ltd. | - |
dc.title | Growth of graphene layers for thin films | - |
dc.type | Article | - |
dc.identifier.doi | 10.1533/9780857093295.2.211 | - |
dc.citation.journaltitle | Thin Film Growth: Physics, Materials Science and Applications | - |
dc.identifier.scopusid | 2-s2.0-84903494776 | - |
dc.citation.endpage | 227 | - |
dc.citation.startpage | 211 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Byung Hee | - |
dc.type.docType | Book Chapter | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordAuthor | Chemical vapour deposition | - |
dc.subject.keywordAuthor | Graphene growth | - |
dc.subject.keywordAuthor | Half-integer quantum Hall effect | - |
dc.subject.keywordAuthor | Roll-to-roll production | - |
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