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Transport through single dopants in gate-all-around silicon nanowire MOSFETs (SNWFETs)

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dc.contributor.authorHong, Byung Hee-
dc.contributor.authorJung, Young Chai-
dc.contributor.authorHwang, Sung Woo-
dc.contributor.authorCho, Keun Hwi-
dc.contributor.authorYeo, Kyoung Hawn-
dc.contributor.authorYeoh, Yun Young-
dc.contributor.authorSuk, Sung Dae-
dc.contributor.authorLi, Ming-
dc.contributor.authorKim, Dong W.-
dc.contributor.authorPark, Dong Gun-
dc.contributor.authorOh, Kyung Seok-
dc.contributor.authorLee, Won Seong-
dc.date.accessioned2024-07-12T01:59:04Z-
dc.date.available2024-07-12T01:59:04Z-
dc.date.created2024-06-19-
dc.date.issued2008-06-
dc.identifier.citationIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, pp.51-+-
dc.identifier.urihttps://hdl.handle.net/10371/204664-
dc.description.abstractTemperature (T) dependent transport measurements of cylindrical shaped gate-all-around silicon nanowire MOSFETs (SNWFETs) were performed. Single electron tunneling behaviors were observed at 4.2 K and one of the devices exhibited anomalously strong current peak which survived even at room temperature. The observed peak was interpreted as an evidence of transport through single impurities in the channel.-
dc.language영어-
dc.publisherInstitute of Electrical and Electronics Engineers Inc.-
dc.titleTransport through single dopants in gate-all-around silicon nanowire MOSFETs (SNWFETs)-
dc.typeArticle-
dc.identifier.doi10.1109/SNW.2008.5418464-
dc.citation.journaltitleIEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008-
dc.identifier.wosid000279102800027-
dc.identifier.scopusid2-s2.0-77949982219-
dc.citation.endpage+-
dc.citation.startpage51-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorHong, Byung Hee-
dc.type.docTypeConference Paper-
dc.description.journalClass1-
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  • College of Natural Sciences
  • Department of Chemistry
Research Area Nanofabrication and characterization, Nanomaterials Synthesis, Quantum mechanics and molecular dynamics simulation, 나노재료 합성, 나노제조 및 특성화, 양자역학 및 분자역학 시뮬레이션

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