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Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors
DC Field | Value | Language |
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dc.contributor.author | Cho, Keun Hwi | - |
dc.contributor.author | Yeo, Kyoung Hwan | - |
dc.contributor.author | Yeoh, Yun Young | - |
dc.contributor.author | Suk, Sung Dae | - |
dc.contributor.author | Li, Ming | - |
dc.contributor.author | Lee, Ji Myoung | - |
dc.contributor.author | Kim, Min Sang | - |
dc.contributor.author | Kim, Dong W. | - |
dc.contributor.author | Park, Dong Gun | - |
dc.contributor.author | Hong, Byung Hee | - |
dc.contributor.author | Jung, Young Chai | - |
dc.contributor.author | Hwang, Sung Woo | - |
dc.date.accessioned | 2024-07-12T02:09:43Z | - |
dc.date.available | 2024-07-12T02:09:43Z | - |
dc.date.created | 2024-06-19 | - |
dc.date.issued | 2008-02 | - |
dc.identifier.citation | Applied Physics Letters, Vol.92 No.5, p. 052102 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.uri | https://hdl.handle.net/10371/204666 | - |
dc.description.abstract | We have investigated the electrical characteristics of cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field effect-transistors with 4 nm radius and the gate length ranging from 22 to 408 nm. We observed strong transconductance overshoot in the linear source-drain bias regime in the devices with channel length shorter than 46 nm. The mean free path estimated from the slope of the zero-field one dimensional ballistic resistance measured as a function of device length was almost the same as this length. (c) 2008 American Institute of Physics. | - |
dc.language | 영어 | - |
dc.publisher | American Institute of Physics | - |
dc.title | Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.2840187 | - |
dc.citation.journaltitle | Applied Physics Letters | - |
dc.identifier.wosid | 000253016500037 | - |
dc.identifier.scopusid | 2-s2.0-38949130708 | - |
dc.citation.number | 5 | - |
dc.citation.startpage | 052102 | - |
dc.citation.volume | 92 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Byung Hee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | CONDUCTANCE | - |
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