LOW-TEMPERATURE, ALL-INORGANIC NANOPARTICLE SOLUTION PROCESS FOR ZnO NANOWIRE NETWORK TRANSISTOR FABRICATION ON A POLYMER SUBSTRATE

Abstract

All-solution processed, low-temperature zinc oxide nanowire network transistor fabrication was demonstrated by combining 1) source-drain electrode fabrication by direct nanoimprinting of metal nanoparticle solution and 2) zinc oxide nanowire network based channel synthesized by a simple hydrothermal approach in water. This simple process can produce high resolution metal contact transistors with inorganic semiconductor nanowire active material in a fully maskless sequence, eliminating the need for lithographic and vacuum processes. The temperature throughout the processing was under 140 degrees C, which will enable further applications to electronics on low-cost, large-area flexible polymer substrates.