ZnO nanowire network transistor fabrication on a polymer substrate by low-temperature, all-inorganic nanoparticle solution process

Abstract

All-solution processed, low-temperature zinc oxide nanowire network transistor fabrication on a polymer substrate was demonstrated. This simple process can produce high resolution metal electrode transistors with inorganic semiconductor nanowire active material in a fully maskless sequence, eliminating the need for lithographic and vacuum processes. The temperature throughout the processing was under 140 degrees C, which will enable further applications to electronics on low-cost, large-area flexible polymer substrates. (C) 2008 American Institute of Physics.