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Operando electron microscopy investigation of polar domain dynamics in twisted van der Waals homobilayers

Cited 76 time in Web of Science Cited 73 time in Scopus
Authors

Ko, Kahyun; Yuk, Ayoung; Engelke, Rebecca; Carr, Stephen; Kim, Junhyung; Park, Daesung; Heo, Hoseok; Kim, Hyun-Mi; Kim, Seul-Gi; Kim, Hyeongkeun; Taniguchi, Takashi; Watanabe, Kenji; Park, Hongkun; Kaxiras, Efthimios; Yang, Sang Mo; Kim, Philip; Yoo, Hyobin

Issue Date
2023-08
Publisher
Nature Publishing Group
Citation
Nature Materials, Vol.22 No.8, pp.992-998
Abstract
Conventional antiferroelectric materials with atomic-scale anti-aligned dipoles undergo a transition to a ferroelectric (FE) phase under strong electric fields. The moire superlattice formed in the twisted stacks of van der Waals crystals exhibits polar domains alternating in moire length with anti-aligned dipoles. In this moire domain antiferroelectic (MDAF) arrangement, the distribution of electric dipoles is distinguished from that of two-dimensional FEs, suggesting dissimilar domain dynamics. Here we performed an operando transmission electron microscopy investigation on twisted bilayer WSe2 to observe the polar domain dynamics in real time. We find that the topological protection, provided by the domain wall network, prevents the MDAF-to-FE transition. As one decreases the twist angle, however, this transition occurs as the domain wall network disappears. Exploiting stroboscopic operando transmission electron microscopy on the FE phase, we measure a maximum domain wall velocity of 300 mu m s(-1). Domain wall pinnings by various disorders limit the domain wall velocity and cause Barkhausen noises in the polarization hysteresis loop. Atomic-scale analysis of the pinning disorders provides structural insight on how to improve the switching speed of van der Waals FEs.
ISSN
1476-1122
URI
https://hdl.handle.net/10371/217865
DOI
https://doi.org/10.1038/s41563-023-01595-0
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area Atomic Scale Electron Microscopy, Designer Interface & Atomic Scale Engineering, Operando Electron Microscopy

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