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Dual-Gated Graphene Devices for Near-Field Nano-imaging

Cited 16 time in Web of Science Cited 17 time in Scopus
Authors

Sunku, Sai S.; Halbertal, Dorri; Engelke, Rebecca; Yoo, Hyobin; Finney, Nathan R.; Curreli, Nicola; Ni, Guangxin; Tan, Cheng; McLeod, Alexander S.; Lo, Chiu Fan Bowen; Dean, Cory R.; Hone, James C.; Kim, Philip; Basov, D. N.

Issue Date
2021-02
Publisher
American Chemical Society
Citation
Nano Letters, Vol.21 No.4, pp.1688-1693
Abstract
Graphene-based heterostructures display a variety of phenomena that are strongly tunable by electrostatic local gates. Monolayer graphene (MLG) exhibits tunable surface plasmon polaritons, as revealed by scanning nano-infrared experiments. In bilayer graphene (BLG), an electronic gap is induced by a perpendicular displacement field. Gapped BLG is predicted to display unusual effects such as plasmon amplification and domain wall plasmons with significantly larger lifetime than MLG. Furthermore, a variety of correlated electronic phases highly sensitive to displacement fields have been observed in twisted graphene structures. However, applying perpendicular displacement fields in nano-infrared experiments has only recently become possible [Li, H.; et al. Nano Lett. 2020, 20, 3106-3112]. In this work, we fully characterize two approaches to realizing nano-optics compatible top gates: bilayer MoS2 and MLG. We perform nano-infrared imaging on both types of structures and evaluate their strengths and weaknesses. Our work paves the way for comprehensive near-field experiments of correlated phenomena and plasmonic effects in graphene-based heterostructures.
ISSN
1530-6984
URI
https://hdl.handle.net/10371/217872
DOI
https://doi.org/10.1021/acs.nanolett.0c04494
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area Atomic Scale Electron Microscopy, Designer Interface & Atomic Scale Engineering, Operando Electron Microscopy

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