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Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)2 Thin Film Solar Cell through Interface Engineering : Achieving 14.4% Alcohol-Based Solution-Processed Cu(In,Ga)(S,Se)<sub>2</sub> Thin Film Solar Cell through Interface Engineering

Cited 65 time in Web of Science Cited 65 time in Scopus
Authors

Park, Gi Soon; Chu, Van Ben; Kim, Byoung Woo; Kim, Dong-Wook; Oh, Hyung-Suk; Hwang, Yun Jeong; Min, Byoung Koun

Issue Date
2018-03
Publisher
American Chemical Society
Citation
ACS Applied Materials & Interfaces, Vol.10 No.12, pp.9894-9899
Abstract
An optimization of band alignment at the p-n junction interface is realized on alcohol-based solution-processed Cu(In,Ga)(S,Se)(2) (CIGS) thin film solar cells, achieving a power-conversion-efficiency (PCE) of 14.4%. To obtain a CIGS thin film suitable for interface engineering, we designed a novel "3-step chalcogenization process" for Cu2-xSe-derived grain growth and a double band gap grading structure. Considering S-rich surface of the CIGS thin film, an alternative ternary (Cd,Zn)S buffer layer is adopted to build favorable "spike" type conduction band alignment instead of "cliff" type. Suppression of interface recombination is elucidated by comparing recombination activation energies using a dark J-V-T analysis.
ISSN
1944-8244
URI
https://hdl.handle.net/10371/218500
DOI
https://doi.org/10.1021/acsami.8b00526
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  • College of Natural Sciences
  • Department of Chemistry
Research Area Artificial Photosynthesis, Electrochemical CO2 Utilization, Solar to chemical conversion device, 인공 광합성, 전기화학적 CO 2 활용, 태양광을 화학으로 변환하는 장치

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