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MOCVD에 의한 InGaAs InP 위의 InAs 자발형성 양자점 성장 연구

DC Field Value Language
dc.contributor.advisor윤의준-
dc.contributor.author권혁-
dc.date.accessioned2010-01-15T02:40:00Z-
dc.date.available2010-01-15T02:40:00Z-
dc.date.copyright2000.-
dc.date.issued2000-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000068443kor
dc.identifier.urihttps://hdl.handle.net/10371/30529-
dc.description학위논문(석사)--서울대학교 대학원 :무기재료공학과,2000.ko
dc.format.extentiii, 70 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.titleMOCVD에 의한 InGaAs InP 위의 InAs 자발형성 양자점 성장 연구ko
dc.typeThesis-
dc.contributor.department무기재료공학과-
dc.description.degreeMasterko
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