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A study on the deposition behavior of amorphous silicon and silicon-germanium thin film for the formation of quantum dot of single electron : 단일 전자 소자용 양자점 형성을 위한 비정질 실리콘과 실리콘-게르마늄 박막의 증착 거동에 대한 연구

DC Field Value Language
dc.contributor.advisor김기범-
dc.contributor.author이동훈-
dc.date.accessioned2010-01-15T02:44:30Z-
dc.date.available2010-01-15T02:44:30Z-
dc.date.copyright2000.-
dc.date.issued2000-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000070089eng
dc.identifier.urihttps://hdl.handle.net/10371/30634-
dc.descriptionThesis (master`s)--서울대학교 대학원 :금속공학과,2000.en
dc.format.extentvii, 67 p.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.titleA study on the deposition behavior of amorphous silicon and silicon-germanium thin film for the formation of quantum dot of single electronen
dc.title.alternative단일 전자 소자용 양자점 형성을 위한 비정질 실리콘과 실리콘-게르마늄 박막의 증착 거동에 대한 연구-
dc.typeThesis-
dc.contributor.department금속공학과-
dc.description.degreeMasteren
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