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질소이온주입된 실리콘 기판 위에 성장한 게이트 산화막에 관한 연구
Ultra-thin gate oxide grown on nitrogen implanted silicon

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Authors
남인호
Advisor
이종덕
Issue Date
2001
Publisher
서울대학교 대학원
Keywords
산화막oxide트랜지스터transistor신뢰성MOS질소이온주입C-V질소축적산화AFM
Description
학위논문(박사)--서울대학교 대학원 :전기공학부,2001.
Language
Korean
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000063452

https://hdl.handle.net/10371/30856
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Ph.D. / Sc.D._전기·정보공학부)
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