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Design and fabrication of ultra-broadband amplifiers using self-aligned GaAs P-HEMT technology : 자기정렬형 GaAs P-HEMT 소자 기술을 애용한 초광대역 증폭기의 설계 및 제작

DC Field Value Language
dc.contributor.advisor서광석-
dc.contributor.author양성기-
dc.date.accessioned2010-01-15T04:23:24Z-
dc.date.available2010-01-15T04:23:24Z-
dc.date.copyright1999.-
dc.date.issued1999-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000074311eng
dc.identifier.urihttps://hdl.handle.net/10371/30927-
dc.descriptionThesis (doctoral)--서울대학교 대학원 :전기공학부,1999.en
dc.format.extentvi, 140 p.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subject자기정렬 게이트en
dc.subjectself-aligned gateen
dc.subjectGaAs P-HEMTen
dc.subjectdistributed amplifieen
dc.subjectCPWen
dc.subject분산 증폭기en
dc.subjectmatrix 분산 증폭en
dc.titleDesign and fabrication of ultra-broadband amplifiers using self-aligned GaAs P-HEMT technologyen
dc.title.alternative자기정렬형 GaAs P-HEMT 소자 기술을 애용한 초광대역 증폭기의 설계 및 제작-
dc.typeThesis-
dc.contributor.department전기공학부-
dc.description.degreeDoctoren
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