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Scaling properties of MOSFET`s under low voltage operation : 저전압 하에서의 MOS 소자 스케이링 특성

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dc.contributor.advisor박영준-
dc.contributor.author강대관-
dc.date.accessioned2010-01-15T04:23:27Z-
dc.date.available2010-01-15T04:23:27Z-
dc.date.copyright1999.-
dc.date.issued1999-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000074309eng
dc.identifier.urihttps://hdl.handle.net/10371/30928-
dc.descriptionThesis (doctoral)--서울대학교 대학원 :전기공학부,1999.en
dc.format.extentxi, 111 p.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subject모델en
dc.subject저전압en
dc.subject저전력en
dc.subject에너지en
dc.subject지연시간en
dc.titleScaling properties of MOSFET`s under low voltage operationen
dc.title.alternative저전압 하에서의 MOS 소자 스케이링 특성-
dc.typeThesis-
dc.contributor.department전기공학부-
dc.description.degreeDoctoren
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