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Homoepitaxial growth and in-situ doping of monocrystalline alpha-SiC thin films by MOCVD for power device applications

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Authors

정재경

Advisor
김형준
Issue Date
2002
Publisher
서울대학교 대학원
Keywords
6H-SiC4H-SiCHomoepitaxial growthBTMSMPorous substrate
Description
Thesis (doctoral)--서울대학교 대학원 :재료공학부,2002.
Language
English
URI
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000062871

https://hdl.handle.net/10371/35410
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