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A Study on the development of new crystallization method and characterization of ferroelectric thin fillms for high-performance non-volatile memory devices : selectively nucleated lateral crystallization(SNLC) : 고성능 비휘발성 메모리 소자를 위한 강유전체 박막의 새로운 결정화 방법 및 특성 평가에 관한 연구 : 선택적 핵생성에 의한 측면 결정화(SNLC)

DC Field Value Language
dc.contributor.advisor주승기-
dc.contributor.author이장식-
dc.date.accessioned2010-01-17T02:13:04Z-
dc.date.available2010-01-17T02:13:04Z-
dc.date.copyright2002.-
dc.date.issued2002-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000060920eng
dc.identifier.urihttps://hdl.handle.net/10371/35423-
dc.descriptionThesis (doctoral)--서울대학교 대학원 :재료공학부,2002.en
dc.format.extentxiii, 150, xv leavesen
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subjectferroelectric thin fillmen
dc.subject강유전체 박막en
dc.subjectPZTen
dc.subject결정립계en
dc.subjectgrain-boundaryen
dc.subject단결정립en
dc.subjectsingle-grainen
dc.subject선택적 핵생성en
dc.subjectgrain growthen
dc.subject결정립 성장en
dc.titleA Study on the development of new crystallization method and characterization of ferroelectric thin fillms for high-performance non-volatile memory devices : selectively nucleated lateral crystallization(SNLC)en
dc.title.alternative고성능 비휘발성 메모리 소자를 위한 강유전체 박막의 새로운 결정화 방법 및 특성 평가에 관한 연구 : 선택적 핵생성에 의한 측면 결정화(SNLC)-
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoren
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