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Growth and characterization of inGaN quantum well structures for light emitting diode and laser diode applications
InGaN 양자우물구조 성장 및 특성평가에 관한 연구

DC Field Value Language
dc.contributor.advisor윤의준-
dc.contributor.author여환국-
dc.date.accessioned2010-01-17T02:17:14Z-
dc.date.available2010-01-17T02:17:14Z-
dc.date.copyright2002.-
dc.date.issued2002-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000060843eng
dc.identifier.urihttps://hdl.handle.net/10371/35434-
dc.descriptionThesis (doctoral)--서울대학교 대학원 :재료공학부,2002.en
dc.format.extentvii, 95 leavesen
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subjectInGaNen
dc.subjectGaNen
dc.subjectMOCVDen
dc.subjectMultiple quantum wellen
dc.subjectwell numberen
dc.titleGrowth and characterization of inGaN quantum well structures for light emitting diode and laser diode applicationsen
dc.title.alternativeInGaN 양자우물구조 성장 및 특성평가에 관한 연구-
dc.typeThesis-
dc.contributor.department재료공학부-
dc.description.degreeDoctoren
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College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Materials Science and Engineering (재료공학부)Theses (Ph.D. / Sc.D._재료공학부)
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