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MOCVD growth of A1GaNGaN heterostructures and InGaNGaN quantum wells and analysis on electrical and optical properties : 유기금속화학기상증착법에 의한 A1GaNGaN 이종구조와 InGaNGaN 양자우물구조 성장 및 전기적, 광학적 물성 분석
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- Authors
- Advisor
- 윤의준
- Issue Date
- 2001
- Publisher
- 서울대학교 대학원
- Keywords
- phase sepaeation ; 유기금속화학기상증착법(MOCVD) ; indium rich clusters ; 조성 불균일 ; exciton localization ; 상분리 ; band tail state ; 밴드 테일 상태 ; two dimensional electron gases
- Description
- Thesis (doctoral)--서울대학교 대학원 :재료공학부,2001.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000066514
https://hdl.handle.net/10371/35448
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