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UHV-CVD와 UHV-ECRCVD를 利用한 多結晶 Si[1-x]Ge[x] 薄膜의 蒸着에 관한 硏究 : A Study on the polycrystalline Si[1-x]Ge[x] thin films grown by ultrahigh vacuum chemical vapor deposition and ultrahigh vacuum electron cyclotron resonance chemical vapor deposition
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 윤의준 | - |
| dc.contributor.author | 박진원 | - |
| dc.date.accessioned | 2010-01-17T02:34:50Z | - |
| dc.date.available | 2010-01-17T02:34:50Z | - |
| dc.date.copyright | 2001. | - |
| dc.date.issued | 2001 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000063457 | kor |
| dc.identifier.uri | https://hdl.handle.net/10371/35509 | - |
| dc.description | 학위논문(박사)--서울대학교 대학원 :재료공학부,2001. | ko |
| dc.format.extent | p. | ko |
| dc.language.iso | ko | ko |
| dc.publisher | 서울대학교 대학원 | ko |
| dc.subject | 게이트 | ko |
| dc.subject | UHV-CVD | ko |
| dc.subject | MOS캐패시터 | ko |
| dc.subject | UHV-ECRCVD | ko |
| dc.subject | UHV-CVD | ko |
| dc.subject | gate | ko |
| dc.subject | 다결정 SiGe | ko |
| dc.subject | polycrystalline SiGe | ko |
| dc.subject | MOs capacitor | ko |
| dc.title | UHV-CVD와 UHV-ECRCVD를 利用한 多結晶 Si[1-x]Ge[x] 薄膜의 蒸着에 관한 硏究 | ko |
| dc.title.alternative | A Study on the polycrystalline Si[1-x]Ge[x] thin films grown by ultrahigh vacuum chemical vapor deposition and ultrahigh vacuum electron cyclotron resonance chemical vapor deposition | ko |
| dc.type | Thesis | - |
| dc.contributor.department | 재료공학부 | - |
| dc.description.degree | Doctor | ko |
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