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As[2]?5 keV 이온 주입을 이용한 얕은 접합의 0.1 ㎛ NMOSFET
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 박병국 | - |
| dc.contributor.author | 최병용 | - |
| dc.date.accessioned | 2010-01-19T08:43:50Z | - |
| dc.date.available | 2010-01-19T08:43:50Z | - |
| dc.date.copyright | 2000. | - |
| dc.date.issued | 2000 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000068711 | kor |
| dc.identifier.uri | https://hdl.handle.net/10371/38218 | - |
| dc.description | 학위논문(석사)--서울대학교 대학원 :전기공학부,2000. | ko |
| dc.format.extent | ii, 52 장 | ko |
| dc.language.iso | ko | ko |
| dc.publisher | 서울대학교 대학원 | ko |
| dc.title | As[2]?5 keV 이온 주입을 이용한 얕은 접합의 0.1 ㎛ NMOSFET | ko |
| dc.type | Thesis | - |
| dc.contributor.department | 전기공학부 | - |
| dc.description.degree | Master | ko |
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