Modification of aluminum thin films for MEMS by ion implantation

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Modification of aluminum thin films for MEMS by ion implantation

DC Field	Value	Language
dc.contributor.advisor	김용협	-
dc.contributor.author	김정길	-
dc.date.accessioned	2010-01-26T06:59:18Z	-
dc.date.available	2010-01-26T06:59:18Z	-
dc.date.copyright	2004.	-
dc.date.issued	2004	-
dc.identifier.uri	http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000055744	eng
dc.identifier.uri	https://hdl.handle.net/10371/44808	-
dc.description	Thesis(master`s)--서울대학교 대학원 :기계항공공학부,2004.	en
dc.format.extent	leaves	en
dc.language.iso	en	en
dc.publisher	서울대학교 대학원	en
dc.subject	MEMS (미소전기기계시스템)	en
dc.subject	MEMS (Micro-electro-mechanical systems)	en
dc.subject	알루미늄	en
dc.subject	aluminum	en
dc.subject	이온 주입	en
dc.subject	ion implantation	en
dc.subject	헬륨	en
dc.subject	helium	en
dc.subject	질소	en
dc.subject	nitrogen	en
dc.subject	힐락	en
dc.subject	hillock	en
dc.subject	표면 거칠기	en
dc.subject	surface roughness	en
dc.subject	경도	en
dc.subject	hardness	en
dc.subject	탄성계수	en
dc.subject	elastic modulus	en
dc.subject	응력구배	en
dc.subject	stress gradient	en
dc.title	Modification of aluminum thin films for MEMS by ion implantation	en
dc.type	Thesis	-
dc.contributor.department	기계항공공학부	-
dc.description.degree	Master	en

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