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Modeling of stress effects in MOSFET devices
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- Authors
- Advisor
- 박영준
- Issue Date
- 2008
- Publisher
- 서울대학교 대학원
- Keywords
- strained silicon ; strained silicon ; 6 band kp method ; 6 band kp method ; effective mass under stress ; effective mass under stress ; valence band edge shifts ; valence band edge shifts ; conduction band edge shifts ; conduction band edge shifts ; triangular potential well ; triangular potential well
- Description
- Thesis(masters) --서울대학교 대학원 :전기. 컴퓨터공학부,2008.8.
- Language
- English
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042264
https://hdl.handle.net/10371/45025
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