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(A) study on InP-based HEMTs with self-aligned asymmetric recess technology

DC Field Value Language
dc.contributor.advisor서광석-
dc.contributor.author고유민-
dc.date.accessioned2010-01-26T15:39:07Z-
dc.date.available2010-01-26T15:39:07Z-
dc.date.copyright2008.-
dc.date.issued2008-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000042217eng
dc.identifier.urihttps://hdl.handle.net/10371/45071-
dc.descriptionThesis(masters) --서울대학교 대학원 :전기. 컴퓨터공학부,2008.8.en
dc.format.extentiv, 36 leaves.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subject비대칭 리세스en
dc.subjectasymmetric recessen
dc.subjectHEMTsen
dc.subjectHEMTsen
dc.subject최대 진동 주파수 (fmax)en
dc.subjectmaximum oscillation frequencyen
dc.subject감마 게이트en
dc.subjectgamma-gateen
dc.title(A) study on InP-based HEMTs with self-aligned asymmetric recess technologyen
dc.typeThesis-
dc.contributor.department전기. 컴퓨터공학부-
dc.description.degreeMasteren
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