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Silicon quantum tunneling device based on band-to-band tunneling mechanism : 밴드간 터널링을 기반으로 하는 실리콘 양자 터널링 소자
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 박병국 | - |
dc.contributor.author | 김경록 | - |
dc.date.accessioned | 2010-01-27 | - |
dc.date.available | 2010-01-27 | - |
dc.date.copyright | 2004. | - |
dc.date.issued | 2004 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000056372 | eng |
dc.identifier.uri | https://hdl.handle.net/10371/45448 | - |
dc.description | Thesis(doctoral)--서울대학교 대학원 :전기·컴퓨터공학부,2004. | en |
dc.format.extent | vii, 134 p. | en |
dc.language.iso | en | en |
dc.publisher | 서울대학교 대학원 | en |
dc.subject | CMOS 기술 | en |
dc.subject | CMOS technology | en |
dc.subject | 양자 효과 | en |
dc.subject | quantum effects | en |
dc.subject | 양자 터널링 | en |
dc.subject | quantum-tunneling | en |
dc.subject | 밴드간 터널링 | en |
dc.subject | band-to-band tunneling | en |
dc.subject | 축퇴 | en |
dc.subject | degenerate | en |
dc.subject | FIBTET | en |
dc.subject | FIBTET | en |
dc.subject | 음 미분 전도도 | en |
dc.subject | negative-differential transconductance | en |
dc.subject | 양자 점 | en |
dc.subject | negative-differential conductance | en |
dc.subject | 단전자 트랜지스터 | en |
dc.subject | quantum-dot | en |
dc.subject | MOSET | en |
dc.subject | SET | en |
dc.subject | 전하 차폐 | en |
dc.subject | MOSET | en |
dc.subject | 모델링 | en |
dc.subject | Coulomb-blockade | en |
dc.subject | 논리회로 | en |
dc.subject | device model | en |
dc.subject | 메모리 | en |
dc.subject | 1T XOR logic | en |
dc.subject | DRAM | en |
dc.title | Silicon quantum tunneling device based on band-to-band tunneling mechanism | en |
dc.title.alternative | 밴드간 터널링을 기반으로 하는 실리콘 양자 터널링 소자 | en |
dc.type | Thesis | - |
dc.contributor.department | 전기·컴퓨터공학부 | - |
dc.description.degree | Doctor | en |
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