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Isolation method for single crystal silicon MEMS with selective silicon-on-insulator structure : 선택적인 SOI 구조를 이용한 단결정실리콘 MEMS의 절연 방법

DC Field Value Language
dc.contributor.advisor조동일-
dc.contributor.author박상준-
dc.date.accessioned2010-01-27-
dc.date.available2010-01-27-
dc.date.copyright2004.-
dc.date.issued2004-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000055547eng
dc.identifier.urihttps://hdl.handle.net/10371/45473-
dc.descriptionThesis (doctoral)--서울대학교 대학원 :전기·컴퓨터공학부,2004.en
dc.format.extentxiv, 79 p.en
dc.language.isoenen
dc.publisher서울대학교 대학원en
dc.subjectselective SOIen
dc.subject선택적 SOIen
dc.subjectFooting Phenomenon in SOIen
dc.subject푸팅 현상en
dc.subjectResidual Stressen
dc.subject잔류 응력en
dc.subjectGyroscopeen
dc.subject자이로스코프en
dc.titleIsolation method for single crystal silicon MEMS with selective silicon-on-insulator structureen
dc.title.alternative선택적인 SOI 구조를 이용한 단결정실리콘 MEMS의 절연 방법en
dc.typeThesis-
dc.contributor.department전기·컴퓨터공학부-
dc.description.degreeDoctoren
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