Browse

Lateral DCIV 방법을 이용한 MOSFET 분석 및 LDD 설계

DC Field Value Language
dc.contributor.advisor박영준-
dc.contributor.author이명진-
dc.date.accessioned2010-01-27T14:44:59Z-
dc.date.available2010-01-27T14:44:59Z-
dc.date.copyright2003.-
dc.date.issued2003-
dc.identifier.urihttp://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000058808kog
dc.identifier.urihttps://hdl.handle.net/10371/45557-
dc.description학위논문(석사)--서울대학교 대학원 :전기·컴퓨터공학부,2003.ko
dc.format.extent63 장ko
dc.language.isokoko
dc.publisher서울대학교 대학원ko
dc.subject누설전류ko
dc.subjectTrapko
dc.subject드레인ko
dc.subjectDCIVko
dc.subjectSRHko
dc.subjectTrap assisted tunnelingko
dc.subjectDRAMko
dc.subjectLeakageko
dc.titleLateral DCIV 방법을 이용한 MOSFET 분석 및 LDD 설계ko
dc.typeThesis-
dc.contributor.department전기·컴퓨터공학부-
dc.description.degreeMasterko
Appears in Collections:
College of Engineering/Engineering Practice School (공과대학/대학원)Dept. of Electrical and Computer Engineering (전기·정보공학부)Theses (Master's Degree_전기·정보공학부)
Files in This Item:
There are no files associated with this item.
  • mendeley

Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.

Browse