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Si interface Control Layer를 이용한 InGaAsSi₃N₄계면 상태 개선 및 insulated gate HEMT 제작에 관한 연구
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- Authors
- Advisor
- 서광석
- Issue Date
- 2003
- Publisher
- 서울대학교 대학원
- Keywords
- RPECVD ; Si3N4 ; Si ICL ; Insulated gate HEMT
- Description
- 학위논문(석사)--서울대학교 대학원 :전기·컴퓨터공학부,2003.
- Language
- Korean
- URI
- http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000058521
https://hdl.handle.net/10371/45573
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