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Design and analysis of insulated gate power devices employing trench structure for improved safe operating area : 安全動作領域 特性 改善을 위하여 트렌치를 이용한 絶緣 게이트 電力素子의 設計 및 分析
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 한민구 | - |
dc.contributor.author | 오재근 | - |
dc.date.accessioned | 2010-01-27T23:12:42Z | - |
dc.date.available | 2010-01-27T23:12:42Z | - |
dc.date.copyright | 2004. | - |
dc.date.issued | 2004 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000055188 | eng |
dc.identifier.uri | https://hdl.handle.net/10371/45821 | - |
dc.description | Thesis (doctoral)--서울대학교 대학원 :전기·컴퓨터공학부,2004. | en |
dc.format.extent | x, 158 p. | en |
dc.language.iso | en | en |
dc.publisher | 서울대학교 대학원 | en |
dc.subject | 전력소자 | en |
dc.subject | Power device | en |
dc.subject | 안전동작영역 | en |
dc.subject | Safe operating area | en |
dc.subject | 트렌치 | en |
dc.subject | Trench | en |
dc.subject | 최대제어가능 전류 | en |
dc.subject | Maximum controllable current | en |
dc.subject | 순방향 전압 강하 | en |
dc.subject | Forward voltage drop | en |
dc.subject | 유동 전계 링 | en |
dc.subject | Floating field limiting ring | en |
dc.subject | 항복전압 | en |
dc.subject | Breakdown voltage | en |
dc.subject | 기생 사이리스터 래치-업 | en |
dc.subject | Parasitic thyristor latch-up | en |
dc.subject | 강인성 | en |
dc.subject | Ruggedness | en |
dc.title | Design and analysis of insulated gate power devices employing trench structure for improved safe operating area | en |
dc.title.alternative | 安全動作領域 特性 改善을 위하여 트렌치를 이용한 絶緣 게이트 電力素子의 設計 및 分析 | en |
dc.type | Thesis | - |
dc.contributor.department | 전기·컴퓨터공학부 | - |
dc.description.degree | Doctor | en |
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