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Design, fabrication and analysis of the lateral anode switched thyristor(LAST) with improved FB-SOA and turn-off characteristics : FB-SOA와 Turn-off 特性을 改善한 水平形 애노드 스위칭 사이리스터에 關한 硏究
DC Field | Value | Language |
---|---|---|
dc.contributor.advisor | 한민구 | - |
dc.contributor.author | 이유상 | - |
dc.date.accessioned | 2010-01-27T23:16:08Z | - |
dc.date.available | 2010-01-27T23:16:08Z | - |
dc.date.copyright | 2003. | - |
dc.date.issued | 2003 | - |
dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000058655 | eng |
dc.identifier.uri | https://hdl.handle.net/10371/45884 | - |
dc.description | Thesis (doctoral)--서울대학교 대학원 :전기·컴퓨터공학부,2003. | en |
dc.format.extent | xi, 135 leaves | en |
dc.language.iso | en | en |
dc.publisher | 서울대학교 대학원 | en |
dc.subject | MOS-게이트 사이리스터 | en |
dc.subject | Mos-gated thyristor | en |
dc.subject | PIC | en |
dc.subject | Pic | en |
dc.subject | FB-SOA | en |
dc.subject | Soi | en |
dc.subject | turn-off | en |
dc.subject | Fb-soa | en |
dc.subject | 전류포화특성 | en |
dc.subject | Current saturation capability | en |
dc.subject | 래치-업 | en |
dc.subject | Latch-up | en |
dc.subject | 기생사이리스터 | en |
dc.subject | Parasitic thyristor | en |
dc.subject | 전자조사 | en |
dc.subject | Electron irradiation | en |
dc.subject | 트렌치 | en |
dc.subject | Trench | en |
dc.subject | 양방향 소자. | en |
dc.subject | Bi-directional device. | en |
dc.title | Design, fabrication and analysis of the lateral anode switched thyristor(LAST) with improved FB-SOA and turn-off characteristics | en |
dc.title.alternative | FB-SOA와 Turn-off 特性을 改善한 水平形 애노드 스위칭 사이리스터에 關한 硏究 | - |
dc.type | Thesis | - |
dc.contributor.department | 전기·컴퓨터공학부 | - |
dc.description.degree | Doctor | en |
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