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A study on the residual ion doping damage at sourcedrain junctions of excimer-laser-annealed polycrystalline silicon thin film transistors : 多結晶 실리콘 薄膜 트랜지스터의 소오스드레인 接合에 殘存하는 이온 注入 損傷에 關한 硏究
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 한민구 | - |
| dc.contributor.author | 박기찬 | - |
| dc.date.accessioned | 2010-01-27T23:16:11Z | - |
| dc.date.available | 2010-01-27T23:16:11Z | - |
| dc.date.copyright | 2003. | - |
| dc.date.issued | 2003 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000058652 | eng |
| dc.identifier.uri | https://hdl.handle.net/10371/45885 | - |
| dc.description | Thesis (doctoral)--서울대학교 대학원 :전기·컴퓨터공학부,2003. | en |
| dc.format.extent | xii, 138 leaves | en |
| dc.language.iso | en | en |
| dc.publisher | 서울대학교 대학원 | en |
| dc.subject | 엑시머 레이저 어닐링 | en |
| dc.subject | Polycrystalline silicon (poly-si) | en |
| dc.subject | 다결정 실리콘 | en |
| dc.subject | Thin film transistor (tft) | en |
| dc.subject | 박막 트랜지스터 | en |
| dc.subject | Excimer laser annealing (ela) | en |
| dc.subject | 사선 입사 | en |
| dc.subject | Oblique-incidence | en |
| dc.subject | 이온 주입 손상 | en |
| dc.subject | Ion doping | en |
| dc.subject | 회절 | en |
| dc.subject | Damage | en |
| dc.subject | 누설 전류 | en |
| dc.subject | Diffraction | en |
| dc.subject | 신뢰도 | en |
| dc.subject | Leakage current | en |
| dc.subject | Stability | en |
| dc.title | A study on the residual ion doping damage at sourcedrain junctions of excimer-laser-annealed polycrystalline silicon thin film transistors | en |
| dc.title.alternative | 多結晶 실리콘 薄膜 트랜지스터의 소오스드레인 接合에 殘存하는 이온 注入 損傷에 關한 硏究 | - |
| dc.type | Thesis | - |
| dc.contributor.department | 전기·컴퓨터공학부 | - |
| dc.description.degree | Doctor | en |
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